metallurgical amorphous silicon carbide refractive index

OSA | Optical and compositional properties of …

We report the study of hydrogenated amorphous silicon-germanium (a-Si1-XGeX:H) films prepared by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) varying the composition (0 ≤ X ≤ 1). Silicon and germanium content is determined by energy dispersion spectroscopy (EDS). Refractive index, absorption coefficient and optical gap are estimated by transmittance measurements as

Hydrogenated amorphous silicon nitride photonic …

2012/10/1· Amorphous silicon based alloys such as hydrogenated silicon nitride (a-Si x N y:H), silicon carbide (a-Si x C y:H) and silicon oxide (a-Si x O y:H) can be easily grown by r.f. plasma-enhanced chemical vapor deposition (PE-CVD) on large area with an excellent

Effect of RF Sputtering Process Parameters on Silicon Nitride Thin …

indied amorphous structure of silicon nitride which was confirmed by XRD pattern. Keywords: Silicon Nitride, Design of experiments, Surface topology, Refractive index, Resistivity. 1. Introduction In modern technology, the role of dielectric thin films in

Preparation and characterization of boron- and …

Hydrogenated amorphous silicon nitride (a-SiN) films were deposited on silicon wafers by plasma-enhanced chemical vapor deposition and in situ doped with boron or phosphorus. Film properties, including both wet and dry etching rate, refractive index, dielectric constant, breakdown strength, dc resistivity, and pinhole density vs. doping percentage were systematically investigated and compared

List of refractive indices - Wikipedia

Standard refractive index measurements are taken at the "yellow doublet" sodium D line, with a wavelength of 589 nanometers. There are also weaker dependencies on temperature , pressure / stress , etc., as well on precise material compositions (presence of dopants , etc.); for many materials and typical conditions, however, these variations are at the percent level or less.

:Strong optical nonlinearity of the nonstoichiometric silicon carbide

The nonlinear refractive index increases to 1 +/- 0.1 x 10(-11) cm(2) W-1 upon increasing the C/Si composition ratio up to 1.83, which is four orders of magnitude higher than that of : Strong optical nonlinearity of the nonstoichiometric silicon carbide

Silicon dioxide - Wikipedia

Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula Si O 2, most commonly found in nature as quartz and in various living organisms. [5] [6] In many parts of the world, silica is the major constituent of sand.Silica is one of the most

RIT Nanolithograpy Research Labs > Optical Properties of …

2012/4/26· Thin films refractive index and extinction coefficient data were obtained by means of spectroscopic ellipsometry coined with spectrophotometry. Unless noted, all films have been rf magnetron sputtered at thickness of 1000 A or less. Bulk materials , ,

Properties of Amorphous Hydrogenated Silicon Carbide …

The surface morphology and physical (density), optical (refractive index), and mechanical (hardness, elasticity) properties of amorphous hydrogenated silicon carbide (a‐SiC:H) films produced by remote microwave hydrogen plasma (RHP)CVD from a triethylsilane

STRUCTURE AND OPTICAL PROPERTIES BY PLASMA ENHANCED …

carbide thin films, has offered an effective route to produce hydrogenated amorphous silicon carbon nitride (a-SiCN:H) that coines the properties of silicon carbide, silicon nitride and carbon nitride. In current study, the variation in the structure, composition and

Amorphous Hydrogenated Silicon Carbide 3ODVPD …

down voltages can be obtained. The refractive index of the silicon nitride thin lms can be measured by an ellipsometer, and the surface roughness can be ana-lyzed by atomic force microscopy (AFM). Table 1. The optimized proposal for the bottom metal of the

Characterization of an electrically induced refractive …

Characterization of an electrically induced refractive index change in a hydrogenated amorphous silicon multistack waveguide Abstract: Electrically induced phase modulation is characterized for the first time in a waveguide-integrated Fabry-Perot (FP) resonating cavity based both on an index- and conductivity high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a-SiC:H) multistack.

Preparation of silicon carbide nitride thin films by …

Amorphous silicon carbide nitride thin films were synthesized on single crystal silicon (0 0 1) substrates by rf reactive sputtered a silicon nitride target in methane and argon atmosphere. The effects of sputtering parameters such as target voltage in the range of 1.6-3.0 kV on the optical properties were studied by a Cary 500 UN-VIS-NIR spectrophotometer and Bio-Rad FTS 185 FTIR spectrometer

Plasma Enhanced Chemical Vapor Deposition (PECVD) | …

Excellent control of material properties (refractive index, stress, hardness, etc.) Films typically deposited by PECVD include silicon oxide, silicon dioxide, silicon nitride, silicon carbide, diamond-like carbon, poly-silicon, and amorphous silicon.

Characterization of an electrically induced refractive …

Electrically induced phase modulation is characterized for the first time in a waveguide-integrated Fabry-Perot (FP) resonating cavity based both on an index- and conductivity high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a-SiC:H) multistack.