Atmospheric pressure chemical vapour deposition of boron
Boron-doped titanium dioxide (B-TiO 2) films were deposited by atmospheric pressure chemical vapour deposition of titanium(IV) chloride, ethyl acetate and tri-isopropyl borate on steel and fluorine-doped-tin oxide substrates at 500, 550 and 600 °C, respectively. The films were characterised using powder X-ray diffraction (PXRD), which showed anatase phase TiO 2 at lower deposition
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N-doped polymer-derived Si(N)OC: The role of the N
N-doped polymer-derived Si(N)OC: The role of the N-containing precursor - Volume 30 Issue 6 - Van Lam Nguyen, Nadhira Bensaada Laidani, Gian Domenico Sorarù
Julien PERNOT - Google Scholar Citations
Hall hole mobility in boron-doped homoepitaxial diamond J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji Physical Review B 81 (20), 205203 , 2010
Mauricio Terrones | Penn State Department of Materials
Our group constitutes a truly multidisciplinary effort focused on understanding the Physics and Chemistry of materials at the nanoscale. In particular, we study low dimensional materials that mainly involve 1- and 2-Dimensions, ranging from carbon nanotubes and graphene nanoribbons to graphene, boron nitride and chalcogenide monolayers (e.g. WS2, MoS2, NbS2 , etc).
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A novel process to produce amorphous nano-sized B useful
crystallographic level, at the boron site, as well as dispersed into MgB2. In fact, the elemental B as well as most of the dopants are not suitable to be manipulated: i.e. boron, carbon and SiC are characterized by high hardness and melting point. There are two main techniques to obtain pure boron powder: via-gas ,  and magnesiothermic
Products / Fluoride-silicon carbide,tungsten carbide
Europium fluoride C A S: 13765-25-8 Physical properties: (. Lit) as a white powder, melting point, 1390 C, the boiling point of 2280 C, density 6.5 Uses: phosphor, luminescent materials, optical coatings, optical fiber doped laser crystal, a single crysta
Doping (semiconductor) - Wikipedia
A very heavily doped semiconductor behaves more like a good conductor (metal) and thus exhibits more linear positive thermal coefficient. Such effect is used for instance in sensistors. Lower dosage of doping is used in other types (NTC or PTC) thermistors. Silicon dopants. Acceptors, p-type Boron is …
Synthesis of ultrafine Si3N4 powder in RF-RF plasma
Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range.
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Boron: Wei, Qiuping
1: Article: Electro-activated persulfate oxidation of malachite green by boron-doped diamond (BDD) anode: effect of degradation process parameters. 2020 Miao, Dongtian / Liu, Guoshuai / Wei, Qiuping / Hu, Naixiu / Zheng, Kuangzhi / Zhu, Chengwu / Liu, Ting / Zhou, Kechao / Yu, Zhiming / Ma, Li.· State Key Laboratory of Powder Metallurgy, School of Materials Science and Engineering, Central
IMPROVED TOUGHNESS OF SILICON CARBIDE
fully sinterable boron-doped SiC powder as the core . between two opposing and thin layers of a SiC powder that sintered to . consid erably less than full density. The wide ster in the Charpy impact test data led to inconclusive results. It did appear, how ever, …
Carbon Doping of MgB by Toluene and Malic-Acid-in-Toluene
substitute on the boron site in the MgB 2 structure. One method of obtaining carbon doped samples is to add a precursor to the magnesium/boron powder mixture that is reduced by magnesium at higher temperatures. Perhaps the most common MgB 2 additive is nanometer size SiC powder which is reduced by magnesium to form Mg